- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 43/30 - EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
Patent holdings for IPC class H10B 43/30
Total number of patents in this class: 108
10-year publication summary
|
0
|
0
|
0
|
0
|
1
|
0
|
25
|
28
|
38
|
14
|
| 2015 | 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Kioxia Corporation | 9847 |
21 |
| Taiwan Semiconductor Manufacturing Company, Ltd. | 36809 |
16 |
| Samsung Electronics Co., Ltd. | 131630 |
12 |
| SK Hynix Inc. | 11030 |
6 |
| United Microelectronics Corp. | 3921 |
6 |
| Yangtze Memory Technologies Co., Ltd. | 1940 |
6 |
| Micron Technology, Inc. | 24960 |
3 |
| Macronix International Co., Ltd. | 2562 |
3 |
| eMemory Technology Inc. | 358 |
3 |
| Sunrise Memory Corporation | 192 |
3 |
| Longitude Flash Memory Solutions Ltd. | 297 |
3 |
| Renesas Electronics Corporation | 6305 |
2 |
| Semiconductor Energy Laboratory Co., Ltd. | 10902 |
2 |
| Cypress Semiconductor Corporation | 1642 |
2 |
| IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) | 1115 |
2 |
| Monolithic 3D Inc. | 270 |
2 |
| Toshiba Corporation | 12017 |
1 |
| Applied Materials, Inc. | 16587 |
1 |
| Rohm Co., Ltd. | 5843 |
1 |
| Korea Advanced Institute of Science and Technology | 3906 |
1 |
| Other owners | 12 |